Theory of the Compensation-Induced Parity-Forbidden Excitation Spectra of Shallow Impurities in Semiconductors

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dc.contributor.authorTimothy Gonzalez
dc.contributor.authorLuis R. González
dc.contributor.authorJ. Trylski
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T20:41:32Z
dc.date.available2026-03-22T20:41:32Z
dc.date.issued1974
dc.description.abstractAn approximate formula for the line shape for the compensation-induced parity-forbidden 1s–2s optical absorption of shallow hydrogen-like impurities in semiconductors is given in the limit of small compensations. The unusual “camel-back” structure of the absorption peak is predicted.
dc.identifier.doi10.1007/978-3-322-94774-1_68
dc.identifier.urihttps://doi.org/10.1007/978-3-322-94774-1_68
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/83507
dc.language.isoen
dc.relation.ispartofProceedings of the Twelfth International Conference on the Physics of Semiconductors
dc.sourceUniversity of the Andes
dc.subjectImpurity
dc.subjectSemiconductor
dc.subjectParity (physics)
dc.subjectExcitation
dc.subjectCompensation (psychology)
dc.subjectAtomic physics
dc.subjectSpectral line
dc.subjectAbsorption spectroscopy
dc.subjectAbsorption (acoustics)
dc.subjectMaterials science
dc.titleTheory of the Compensation-Induced Parity-Forbidden Excitation Spectra of Shallow Impurities in Semiconductors
dc.typebook-chapter

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