Guillermo Rafael-ValdiviaZhiguo SuAnthony UrquizoThalia Mendoza2026-03-222026-03-22201410.1109/latincom.2014.7041886https://doi.org/10.1109/latincom.2014.7041886https://andeanlibrary.org/handle/123456789/62706A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.enBroadbandDispersion (optics)WidebandElectronic engineeringOptoelectronicsComputer scienceSIGNAL (programming language)Materials scienceBroadband networksCommunications systemarticle