D. VasilacheAlexandra NicoloiuGeorge BoldeiuIoana ZdruT. KostopoulosM. NedelcuА. СтавринидисClaudia NastaseГ. СтавринидисГ. Константинидис2026-03-222026-03-22202210.1109/cas56377.2022.9934404https://doi.org/10.1109/cas56377.2022.9934404https://andeanlibrary.org/handle/123456789/52840Citaciones: 2The paper presents a successful demonstration of 0-level packaged SAW pressure sensors developed on GaN/Si thin membranes (1.3 μ m/ 10 μ m) with a backside Mo metallization (30 nm). FEM simulations were performed in order to predict the mechanical behavior of the membrane and of the package. One-port SAW devices having IDTs of 120 nm width were fabricated bye-beam nanolithography. High values of the sensitivity (1102 kHz/Bar) and of the pressure coefficient of frequency (126 ppm/Bar) have been obtained due to the very high frequency operation (8.7 GHz) of the SAW. An insignificant dropping of these values was obtained after the bonding of the capsule.enMaterials scienceBar (unit)Sensitivity (control systems)OptoelectronicsFabricationPort (circuit theory)Pressure sensorNanolithographyAcousticsComposite materialarticle