Device level model for trapping effects in GaN and GaAs devices for broadband data communication

Guillermo Rafael-ValdiviaZhiguo SuAnthony UrquizoThalia Mendoza2026-03-222026-03-22201510.1109/apmc.2015.7413228https://doi.org/10.1109/apmc.2015.7413228https://andeanlibrary.org/handle/123456789/51710Citaciones: 2In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.enTrappingBroadbandOptoelectronicsMaterials scienceDispersion (optics)SIGNAL (programming language)Gallium arsenideEquivalent circuitWide-bandgap semiconductorWork (physics)Device level model for trapping effects in GaN and GaAs devices for broadband data communicationarticle