Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication

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dc.contributor.authorGuillermo Rafael-Valdivia
dc.contributor.authorZhiguo Su
dc.contributor.authorAnthony Urquizo
dc.contributor.authorThalia Mendoza
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T17:11:29Z
dc.date.available2026-03-22T17:11:29Z
dc.date.issued2014
dc.description.abstractA novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
dc.identifier.doi10.1109/latincom.2014.7041886
dc.identifier.urihttps://doi.org/10.1109/latincom.2014.7041886
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/62706
dc.language.isoen
dc.sourceUniversidad La Salle
dc.subjectBroadband
dc.subjectDispersion (optics)
dc.subjectWideband
dc.subjectElectronic engineering
dc.subjectOptoelectronics
dc.subjectComputer science
dc.subjectSIGNAL (programming language)
dc.subjectMaterials science
dc.subjectBroadband networks
dc.subjectCommunications system
dc.titleModeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
dc.typearticle

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