Development of high frequency SAW devices devoted for pressure sensing

Simple item page
dc.contributor.authorD. Vasilache
dc.contributor.authorAlexandra Nicoloiu
dc.contributor.authorGeorge Boldeiu
dc.contributor.authorIoana Zdru
dc.contributor.authorT. Kostopoulos
dc.contributor.authorM. Nedelcu
dc.contributor.authorА. Ставринидис
dc.contributor.authorClaudia Nastase
dc.contributor.authorГ. Ставринидис
dc.contributor.authorГ. Константинидис
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T15:31:12Z
dc.date.available2026-03-22T15:31:12Z
dc.date.issued2022
dc.descriptionCitaciones: 2
dc.description.abstractThe paper presents a successful demonstration of 0-level packaged SAW pressure sensors developed on GaN/Si thin membranes (1.3 μ m/ 10 μ m) with a backside Mo metallization (30 nm). FEM simulations were performed in order to predict the mechanical behavior of the membrane and of the package. One-port SAW devices having IDTs of 120 nm width were fabricated bye-beam nanolithography. High values of the sensitivity (1102 kHz/Bar) and of the pressure coefficient of frequency (126 ppm/Bar) have been obtained due to the very high frequency operation (8.7 GHz) of the SAW. An insignificant dropping of these values was obtained after the bonding of the capsule.
dc.identifier.doi10.1109/cas56377.2022.9934404
dc.identifier.urihttps://doi.org/10.1109/cas56377.2022.9934404
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/52840
dc.language.isoen
dc.sourceNational Institute for Research and Development in Microtechnologies
dc.subjectMaterials science
dc.subjectBar (unit)
dc.subjectSensitivity (control systems)
dc.subjectOptoelectronics
dc.subjectFabrication
dc.subjectPort (circuit theory)
dc.subjectPressure sensor
dc.subjectNanolithography
dc.subjectAcoustics
dc.subjectComposite material
dc.titleDevelopment of high frequency SAW devices devoted for pressure sensing
dc.typearticle

Files

Collections

Artículo Científico Publicado