Driving magnetic domains at the nanoscale by interfacial strain-induced proximity

dc.contributor.authorIlya Valmianski
dc.contributor.authorArantxa Fraile Rodríguez
dc.contributor.authorJavier Rodríguez-Álvarez
dc.contributor.authorM. Garcı́a del Muro
dc.contributor.authorChristian Wolowiec
dc.contributor.authorFlorian Kronast
dc.contributor.authorJuan Gabriel Ramírez
dc.contributor.authorIván K. Schuller
dc.contributor.authorA. Labarta
dc.contributor.authorX. Batlle
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T14:51:48Z
dc.date.available2026-03-22T14:51:48Z
dc.date.issued2021
dc.descriptionCitaciones: 9
dc.description.abstractWe investigate the local nanoscale changes of the magnetic anisotropy of a Ni film subject to an inverse magnetostrictive effect by proximity to a V2O3 layer. Using temperature-dependent photoemission electron microscopy (PEEM) combined with X-ray magnetic circular dichroism (XMCD), direct images of the Ni spin alignment across the first-order structural phase transition (SPT) of V2O3 were obtained. We find an abrupt temperature-driven reorientation of the Ni magnetic domains across the SPT, which is associated with a large increase of the coercive field. Moreover, angular dependent ferromagnetic resonance (FMR) shows a remarkable change in the magnetic anisotropy of the Ni film across the SPT of V2O3. Micromagnetic simulations based on these results are in quantitative agreement with the PEEM data. Direct measurements of the lateral correlation length of the Ni domains from XMCD images show an increase of almost one order of magnitude at the SPT compared to room temperature, as well as a broad spatial distribution of the local transition temperatures, thus corroborating the phase coexistence of Ni anisotropies caused by the V2O3 SPT. We show that the rearrangement of the Ni domains is due to strain induced by the oxide layers' structural domains across the SPT. Our results illustrate the use of alternative hybrid systems to manipulate magnetic domains at the nanoscale, which allows for engineering of coercive fields for novel data storage architectures.
dc.identifier.doi10.1039/d0nr08253h
dc.identifier.urihttps://doi.org/10.1039/d0nr08253h
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/48988
dc.language.isoen
dc.publisherRoyal Society of Chemistry
dc.relation.ispartofNanoscale
dc.sourceUniversity of California, San Diego
dc.subjectMaterials science
dc.subjectNanoscopic scale
dc.subjectCondensed matter physics
dc.subjectAnisotropy
dc.subjectThin film
dc.subjectStrain (injury)
dc.subjectPhase transition
dc.subjectLayer (electronics)
dc.subjectNanotechnology
dc.subjectPhase (matter)
dc.titleDriving magnetic domains at the nanoscale by interfacial strain-induced proximity
dc.typearticle

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