LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY

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dc.contributor.authorAlba Ávila
dc.contributor.authorRuy S. Bonilla
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T16:08:16Z
dc.date.available2026-03-22T16:08:16Z
dc.date.issued2012
dc.descriptionCitaciones: 1
dc.description.abstractA characterization of local anodic oxidation using scanning probe microscopy is performed on a (100) silicon substrate. The formation of patterns varies as a function of voltage, humidity, and scanning speed. A set of experiments is presented to analyze the voltage and scanning speed dependence under stable environmental conditions (50.5% relative humidity, 22 °C, and 767 mmHg). A finer control of the dimensions of the local oxidation patterns is attained at low voltages and low scanning speeds. Oxide ridges are observed at high voltages independently of the writing speed. Their presence sets up an upper limit for the oxide pattern formation
dc.identifier.urihttp://bdigital.unal.edu.co/34569/2/34742-191288-1-PB.html
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/56460
dc.language.isoen
dc.relation.ispartofRepositorio Institucional UN - Biblioteca Digital
dc.sourceUniversidad de Los Andes
dc.subjectSilicon
dc.subjectAtomic force microscopy
dc.subjectAnodic oxidation
dc.subjectAnode
dc.subjectMaterials science
dc.subjectChemical engineering
dc.subjectNanotechnology
dc.subjectChemistry
dc.titleLOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY
dc.typearticle

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