Nd3+ and Er3+ in morphous silicon compounds for photonics

Abstract

This work presents a study of the photoluminescence (PL) of Nd and Er-doped hydrogenated amorphous silicon compounds. Thin films were deposited by rf sputtering a silicon target partially covered by small metallic Nd or Er platelets in a H2 + N2 + Ar or H2 + O2 + Ar atmosphere, respectively. PL measurements on waveguide geometry were performed. The experimental results indicate a super linear behavior of the PL with excitation power for both materials at 10 K. There were found cavity modes indicating a interference process inside the waveguide. The results suggest the presence of stimulated emission process and the power of the materials to be used for photonic purposes.

This work presents a study of the photoluminescence (PL) of Nd and Er-doped hydrogenated amorphous silicon compounds. Thin films were deposited by rf sputtering a silicon target partially covered by small metallic Nd or Er platelets in a H2 + N2 + Ar or H2 + O2 + Ar atmosphere, respectively. PL measurements on waveguide geometry were performed. The experimental results indicate a super linear behavior of the PL with excitation power for both materials at 10 K. There were found cavity modes indicating a interference process inside the waveguide. The results suggest the presence of stimulated emission process and the power of the materials to be used for photonic purposes.