Device level model for trapping effects in GaN and GaAs devices for broadband data communication

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dc.contributor.authorGuillermo Rafael-Valdivia
dc.contributor.authorZhiguo Su
dc.contributor.authorAnthony Urquizo
dc.contributor.authorThalia Mendoza
dc.coverage.spatialBolivia
dc.date.accessioned2026-03-22T15:19:32Z
dc.date.available2026-03-22T15:19:32Z
dc.date.issued2015
dc.descriptionCitaciones: 2
dc.description.abstractIn this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.
dc.identifier.doi10.1109/apmc.2015.7413228
dc.identifier.urihttps://doi.org/10.1109/apmc.2015.7413228
dc.identifier.urihttps://andeanlibrary.org/handle/123456789/51710
dc.language.isoen
dc.relation.ispartof2015 Asia-Pacific Microwave Conference (APMC)
dc.sourceUniversidad La Salle
dc.subjectTrapping
dc.subjectBroadband
dc.subjectOptoelectronics
dc.subjectMaterials science
dc.subjectDispersion (optics)
dc.subjectSIGNAL (programming language)
dc.subjectGallium arsenide
dc.subjectEquivalent circuit
dc.subjectWide-bandgap semiconductor
dc.subjectWork (physics)
dc.titleDevice level model for trapping effects in GaN and GaAs devices for broadband data communication
dc.typearticle

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